Littelfuse IXTP90N15T

包装/外壳

TO-220-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

90

Maximum Drain Source Resistance (MOhm)

20@10V

Typical Gate Charge @ Vgs (nC)

80@10V

Typical Gate Charge @ 10V (nC)

80

Typical Input Capacitance @ Vds (pF)

4100@25V

Maximum Power Dissipation (mW)

455000

Typical Fall Time (ns)

19

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220

Vds - Drain-Source Breakdown Voltage

150 V

Pd - Power Dissipation

455 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

20 mOhms

Id - Continuous Drain Current

90 A

零件状态

NRND

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N