Littelfuse IXTQ32N65X

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5.5

Maximum Continuous Drain Current (A)

32

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

135@10V

Typical Gate Charge @ Vgs (nC)

54@10V

Typical Gate Charge @ 10V (nC)

54

Typical Input Capacitance @ Vds (pF)

2205@25V

Maximum Power Dissipation (mW)

500000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

49

Typical Turn-Off Delay Time (ns)

58

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

零件状态

NRND

配置

Single

信道型

N