Littelfuse IXTR120P20T

包装/外壳

TO-247-3

EU RoHS

符合免除

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

90

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

32@10V

Typical Gate Charge @ Vgs (nC)

740@10V

Typical Gate Charge @ 10V (nC)

740

Typical Input Capacitance @ Vds (pF)

73000@25V

Maximum Power Dissipation (mW)

595000

Typical Fall Time (ns)

50

Typical Rise Time (ns)

85

Typical Turn-Off Delay Time (ns)

200

Typical Turn-On Delay Time (ns)

90

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.34(Max)

Package Width

5.21(Max)

Package Length

16.13(Max)

PCB changed

3

Tab

Tab

Supplier Package

ISOPLUS 247

Vds - Drain-Source Breakdown Voltage

200 V

Transistor Polarity

P-Channel

Mounting Styles

通孔

Rds On - Drain-Source Resistance

32 mOhms

Id - Continuous Drain Current

90 A

系列

IXTR120P20

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

P