Littelfuse IXTT11P50

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

11

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

200

Maximum Drain Source Resistance (MOhm)

750@10V

Typical Gate Charge @ Vgs (nC)

130@10V

Typical Gate Charge @ 10V (nC)

130

Typical Gate to Drain Charge (nC)

55

Typical Gate to Source Charge (nC)

30

Typical Input Capacitance @ Vds (pF)

4700@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

187@25V

Minimum Gate Threshold Voltage (V)

3

Typical Output Capacitance (pF)

500

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

35

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

35

Typical Turn-On Delay Time (ns)

33

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

44

Typical Gate Plateau Voltage (V)

5.3

Typical Reverse Recovery Time (ns)

500

Maximum Diode Forward Voltage (V)

3

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

零件状态

活跃

引脚数量

3

配置

Single

信道型

P