Littelfuse IXTT16N10D2
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IXTT16N10D2
1475-IXTT16N10D2
晶体管 - FET,MOSFET - 阵列
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IXTT16N10D2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
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IXTT16N10D2详情
Littelfuse IXTT16N10D2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Typical Gate Charge @ Vgs (nC)
225@5V
Maximum Drain Source Resistance (MOhm)
64@0V
Maximum Continuous Drain Current (A)
16(Min)
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
100
Number of Elements per Chip
1
Channel Mode
Depletion
Category
功率MOSFET
PPAP
无
Automotive
无
SVHC Exceeds Threshold
有
SVHC
有
HTS
8541.29.00.95
ECCN (US)
EAR99
EU RoHS
符合免除
Typical Gate Charge @ 10V (nC)
225
Typical Input Capacitance @ Vds (pF)
5700@25V
Maximum Power Dissipation (mW)
830000
Typical Fall Time (ns)
70
Typical Rise Time (ns)
43
Typical Turn-Off Delay Time (ns)
340
Typical Turn-On Delay Time (ns)
45
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
表面贴装
Package Height
5.1(Max)
Package Width
14(Max)
Package Length
16.05(Max)
PCB changed
2
Tab
Tab
Supplier Package
TO-268
MSL
-
Qualification
-
Continuous Drain Current Id
16A
零件状态
活跃
引脚数量
3
配置
Single
功率耗散
830W
信道型
N
IXTT16N10D2拓展信息
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