Littelfuse IXTY02N120P

包装/外壳

TO-252-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

0.2

Maximum Drain Source Resistance (mOhm)

75000@10V

Typical Gate Charge @ Vgs (nC)

4.7@10V

Typical Gate Charge @ 10V (nC)

4.7

Typical Input Capacitance @ Vds (pF)

104@25V

Maximum Power Dissipation (mW)

33000

Typical Fall Time (ns)

39

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

21

Typical Turn-On Delay Time (ns)

6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Qualification

-

Continuous Drain Current Id

200mA

Vds - Drain-Source Breakdown Voltage

1.2 kV

Pd - Power Dissipation

33 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

75 Ohms

Id - Continuous Drain Current

200 mA

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

33W

信道型

N