Littelfuse IXTY1N100P

包装/外壳

TO-252-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Typical Gate Charge @ 10V (nC)

15.5

Typical Input Capacitance @ Vds (pF)

331@25V

Maximum Power Dissipation (mW)

50000

Typical Fall Time (ns)

24

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

55

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Typical Gate Charge @ Vgs (nC)

15.5@10V

Maximum Drain Source Resistance (MOhm)

15000@10V

Maximum Continuous Drain Current (A)

1

Maximum Gate Source Voltage (V)

±20

Vds - Drain-Source Breakdown Voltage

1 kV

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

15 Ohms

Id - Continuous Drain Current

1 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N