Littelfuse IXTY1R4N120P-TRL

包装/外壳

TO-252-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

Polar

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Operating Junction Temperature (°C)

150

Maximum Continuous Drain Current (A)

1.4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

13000@10V

Typical Gate Charge @ Vgs (nC)

24.8@10V

Typical Gate Charge @ 10V (nC)

24.8

Typical Gate to Drain Charge (nC)

12.8

Typical Gate to Source Charge (nC)

4.4

Typical Input Capacitance @ Vds (pF)

666@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

7.6@25V

Minimum Gate Threshold Voltage (V)

2.5

Typical Output Capacitance (pF)

36

Maximum Power Dissipation (mW)

86000

Typical Fall Time (ns)

29

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

78

Typical Turn-On Delay Time (ns)

25

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Pulsed Drain Current @ TC=25°C (A)

3

Typical Gate Plateau Voltage (V)

4.75

Typical Reverse Recovery Time (ns)

900

Maximum Diode Forward Voltage (V)

1.5

Maximum Positive Gate Source Voltage (V)

30

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

86 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

24.8 nC

Rds On - Drain-Source Resistance

13 Ohms

Id - Continuous Drain Current

1.4 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N