MagnaChip MDF10N60BTH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

700@10V

Typical Gate Charge @ Vgs (nC)

28.1@10V

Typical Gate Charge @ 10V (nC)

28.1

Typical Input Capacitance @ Vds (pF)

1409@25V

Maximum Power Dissipation (mW)

48000

Typical Fall Time (ns)

39

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

116

Typical Turn-On Delay Time (ns)

23

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

16.13(Max)

Package Width

4.93(Max)

Package Length

10.71(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

Lead Shape

通孔

包装

Tube

零件状态

活跃

引脚数量

3

配置

Single

信道型

N