MagnaChip MDF4N65BTH

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

2200@10V

Typical Gate Charge @ Vgs (nC)

11.6@10V

Typical Gate Charge @ 10V (nC)

11.6

Typical Input Capacitance @ Vds (pF)

518@25V

Maximum Power Dissipation (mW)

35000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

41

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

16.13(Max)

Package Width

4.93(Max)

Package Length

10.71(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

Lead Shape

通孔

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDF4N65BTH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.74

包装

Tube

零件状态

活跃

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N