MagnaChip MMF80R1K2PTH

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

超级交界处

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

4.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

1200@10V

Typical Gate Charge @ Vgs (nC)

15.2@10V

Typical Gate Charge @ 10V (nC)

15.2

Typical Input Capacitance @ Vds (pF)

483@25V

Maximum Power Dissipation (mW)

28400

Typical Fall Time (ns)

20.8

Typical Rise Time (ns)

21.2

Typical Turn-Off Delay Time (ns)

44.4

Typical Turn-On Delay Time (ns)

12.4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

16.13(Max)

Package Width

4.93(Max)

Package Length

10.71(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

Lead Shape

通孔

Manufacturer Part Number

MMF80R1K2PTH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.74

包装

Tube

零件状态

Unconfirmed

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N