MagnaChip MDI6N65BTH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

5.7

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

1450@10V

Typical Gate Charge @ Vgs (nC)

15.8@10V

Typical Gate Charge @ 10V (nC)

15.8

Typical Input Capacitance @ Vds (pF)

752@25V

Maximum Power Dissipation (mW)

119000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

56

Typical Turn-On Delay Time (ns)

16

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

6.1

Package Width

2.39(Max)

Package Length

6.73(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-251

Supplier Package

TO-251

Lead Shape

通孔

包装

Tube

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N