MagnaChip MDP10N60GTH

底架

通孔

引脚数

3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

700@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Input Capacitance @ Vds (pF)

1360@25V

Maximum Power Dissipation (mW)

156000

Typical Fall Time (ns)

32

Typical Rise Time (ns)

38

Typical Turn-Off Delay Time (ns)

116

Typical Turn-On Delay Time (ns)

53

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.4(Max)

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

RoHS

Non-Compliant

Turn Off Delay Time

116 ns

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDP10N60GTH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.73

包装

Tube

零件状态

Unconfirmed

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

156 W

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

3

配置

Single

元素配置

Single

接通延迟时间

53 ns

连续放电电流(ID)

10 A

栅极至源极电压(Vgs)

30 V

输入电容

1.36 nF

信道型

N

漏源电阻

700 mΩ

宽度

4.83 mm

高度

16.51 mm

长度

10.67 mm