MagnaChip MDU1931VRH

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

3.6@10V

Typical Gate Charge @ Vgs (nC)

68.5@10V

Typical Gate Charge @ 10V (nC)

68.5

Typical Input Capacitance @ Vds (pF)

4630@40V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

18.9

Typical Rise Time (ns)

41

Typical Turn-Off Delay Time (ns)

30.3

Typical Turn-On Delay Time (ns)

19.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.1(Max)

Package Width

6.1(Max)

Package Length

5.1(Max)

PCB changed

8

Standard Package Name

DFN

Supplier Package

DFN EP

Lead Shape

No Lead

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

20.5

Package Description

,

Rohs Code

有

Manufacturer Part Number

MDU1931VRH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.73

包装

卷带

零件状态

Unconfirmed

Reach合规守则

unknown

引脚数量

8

配置

单四漏三源

信道型

N