MagnaChip MDV1524URH

底架

表面贴装

引脚数

33

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.7

Maximum Continuous Drain Current (A)

15.4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

8.1@10V

Typical Gate Charge @ Vgs (nC)

[email protected]|15.9@10V

Typical Gate Charge @ 10V (nC)

15.9

Typical Input Capacitance @ Vds (pF)

1019@15V

Maximum Power Dissipation (mW)

3400

Typical Fall Time (ns)

5.9

Typical Rise Time (ns)

17.9

Typical Turn-Off Delay Time (ns)

25.1

Typical Turn-On Delay Time (ns)

7.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.75(Max)

Package Width

3.2(Max)

Package Length

3.2(Max)

PCB changed

8

Standard Package Name

DFN

Supplier Package

功率 DFN EP

RoHS

Non-Compliant

Turn Off Delay Time

25.1 ns

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDV1524URH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.73

包装

卷带

零件状态

活跃

最高工作温度

150 °C

最小工作温度

-55 °C

最大功率耗散

25.2 W

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

8

配置

单四漏三源

元素配置

Single

接通延迟时间

7.5 ns

连续放电电流(ID)

42 A

栅极至源极电压(Vgs)

20 V

输入电容

1.019 nF

信道型

N

漏源电阻

11.7 mΩ

宽度

3.2 mm

高度

800 µm

长度

3.2 mm