MagnaChip MMP60R360PTH

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

超级交界处

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

11

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

360@10V

Typical Gate Charge @ Vgs (nC)

28@10V

Typical Gate Charge @ 10V (nC)

28

Typical Input Capacitance @ Vds (pF)

890@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

40

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

18

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.65

Package Width

4.83(Max)

Package Length

10.67(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

RoHS

Non-Compliant

Package Description

,

Manufacturer Part Number

MMP60R360PTH

Manufacturer

MagnaChip Semiconductor Ltd

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.72

包装

Tube

零件状态

活跃

Reach合规守则

unknown

引脚数量

3

配置

Single

信道型

N