APT60GT60JRD详情
Microchip APT60GT60JRD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-227-4
Maximum Gate Emitter Voltage
20 V
Pd - Power Dissipation
378 W
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
2 V
Unit Weight
2 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Continuous Collector Current at 25 C
93 A
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Collector- Emitter Voltage VCEO Max
600 V
系列
*
包装
Tube
零件状态
活跃
子类别
IGBTs
技术
Si
配置
Single
产品类别
IGBT模块
产品
IGBT硅模块
产品类别
IGBT模块
APT60GT60JRD拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
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