Microchip Technology APT50GR120B2
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APT50GR120B2
1610-APT50GR120B2
晶体管 - IGBT - 模块
TO-247-3
大陆
立即发货

IGBT Modules FG, IGBT, 1200V, 50A, TO-247 T-MAXView in Development Tools Selector
1最小包装量--
APT50GR120B2详情
Microchip Technology APT50GR120B2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
安装类型
通孔
供应商器件包装
TO-247
RoHS
Details
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
3.5 V
Continuous Collector Current at 25 C
117 A
Gate-Emitter Leakage Current
250 nA
Pd - Power Dissipation
694 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
30 V
Mounting Styles
通孔
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
0.211644 oz
Test Conditions
600V, 50A, 4.3Ohm, 15V
Product Status
活跃
厂商
微芯片技术
Base Product Number
APT50GR120
Current-Collector (Ic) (Max)
117 A
Package
Tube
包装
Tube
系列
-
操作温度
-55°C ~ 150°C (TJ)
配置
Single
输入类型
Standard
功率 - 最大
694 W
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
3.2V @ 15V, 50A
IGBT类型
NPT
闸门收费
445 nC
集极脉冲电流(Icm)
200 A
Td(开/关)@25°C
28ns/237ns
开关能量
2.14mJ (on), 1.48mJ (off)
产品
IGBT硅模块
APT50GR120B2拓展信息
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