Microchip Technology ARF463AG

包装/外壳

TO-247-3

表面安装

NO

供应商器件包装

TO-247

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Transistor Polarity

N-Channel

Id - Continuous Drain Current

9 A

Vds - Drain-Source Breakdown Voltage

500 V

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Mounting Styles

通孔

Channel Mode

Enhancement

Fall Time

4 ns

Forward Transconductance - Min

4 mS

Pd - Power Dissipation

180 W

Factory Pack QuantityFactory Pack Quantity

1

Vgs - Gate-Source Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

5 V

Unit Weight

1.340411 oz

Continuous Drain Current Id

9

Package

Tube

Base Product Number

ARF463

厂商

微芯片技术

Product Status

活跃

Voltage Rated

500 V

Rds On - Drain-Source Resistance

-

Drain Current-Max (ID)

9 A

Risk Rank

1.29

Turn-off Time-Max (toff)

28 ns

Ihs Manufacturer

MICROSEMI CORP

Part Life Cycle Code

活跃

Number of Elements

1

Package Shape

RECTANGULAR

Turn-on Time-Max (ton)

18 ns

Manufacturer Part Number

ARF463AG

Rohs Code

有

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Style

FLANGE MOUNT

包装

Tube

系列

-

无铅代码

无

ECCN 代码

EAR99

类型

射频功率MOSFET

额定电流

9A

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

compliant

频率

81.36MHz

JESD-30代码

R-PSFM-T3

工作频率

100 MHz

配置

N-Channel

操作模式

增强型MOSFET

功率耗散

180

箱体转运

SOURCE

输出功率

100 W

测试电流

50 mA

晶体管应用

AMPLIFIER

上升时间

4.1 ns

极性/通道类型

N-CHANNEL

工作温度范围

- 55 C to + 150 C

JEDEC-95代码

TO-247

增益

15 dB

最大漏极电流 (Abs) (ID)

9 A

DS 击穿电压-最小值

500 V

信道型

N

功率 - 输出

100W

场效应管技术

METAL-OXIDE SEMICONDUCTOR

噪声图

-

电压-测试

125 V

反馈上限-最大值 (Crss)

12 pF

最高频段

甚高频段

功率增益-最小值(Gp)

13 dB