Microchip Technology VRF2933

包装/外壳

M177

表面安装

YES

供应商器件包装

M177

终端数量

4

晶体管元件材料

SILICON

RoHS

Details

Transistor Polarity

N-Channel

Id - Continuous Drain Current

42 A

Vds - Drain-Source Breakdown Voltage

180 V

Minimum Operating Temperature

- 65 C

Maximum Operating Temperature

+ 150 C

Forward Transconductance - Min

8 mS

Pd - Power Dissipation

648 W

Factory Pack QuantityFactory Pack Quantity

1

Vgs - Gate-Source Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Unit Weight

1.101341 oz

Continuous Drain Current Id

42

Package

Bulk

Base Product Number

VRF2933

厂商

微芯片技术

Product Status

活跃

Voltage Rated

170 V

Mounting Styles

法兰安装

Rds On - Drain-Source Resistance

-

Package Description

0.630 INCH, ROHS COMPLIANT, M177, SOE, 4 PIN

Package Style

FLANGE MOUNT

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

200 °C

Rohs Code

有

Manufacturer Part Number

VRF2933

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

2.19

Drain Current-Max (ID)

40 A

系列

-

ECCN 代码

EAR99

类型

射频功率MOSFET

额定电流

2mA

端子位置

RADIAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

频率

150MHz

JESD-30代码

O-CRFM-F4

资历状况

不合格

工作频率

30 MHz

配置

N-Channel

操作模式

增强型MOSFET

功率耗散

648

箱体转运

SOURCE

输出功率

300 W

测试电流

250 mA

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

工作温度范围

- 65 C to + 150 C

增益

25 dB

DS 击穿电压-最小值

170 V

信道型

N

功率 - 输出

300W

场效应管技术

METAL-OXIDE SEMICONDUCTOR

噪声图

-

电压-测试

50 V

最高频段

甚高频段