APTGF50A120T3WG详情
Microsemi APTGF50A120T3WG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Typical Collector Emitter Saturation Voltage (V)
3.2
Maximum Collector-Emitter Voltage (V)
1200
Maximum Power Dissipation (mW)
312000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
70
Maximum Gate Emitter Leakage Current (uA)
0.1
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
Case SP-3
Military
无
Mounting
Screw
Package Height
11.5
Package Length
73.4
Package Width
40.8
PCB changed
18
零件状态
Obsolete
引脚数量
18
配置
Dual
信道型
N
RoHS状态
符合RoHS标准
APTGF50A120T3WG拓展信息
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation








哦! 它是空的。