APTGL60A120T1G详情
Microsemi APTGL60A120T1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
1.85
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
280000
Maximum Continuous Collector Current (A)
80
Maximum Gate Emitter Leakage Current (uA)
0.4
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Supplier Package
Case SP-1
Military
无
Mounting
Screw
Package Height
11.5
Package Length
51.6
Package Width
40.8
PCB changed
12
零件状态
Obsolete
引脚数量
12
配置
Dual
信道型
N
RoHS状态
符合RoHS标准
APTGL60A120T1G拓展信息
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation








哦! 它是空的。