NXP USA Inc. BUK7607-55B,118

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

D2PAK

Online Catalog

N-Channel Standard FETs

Standard Package

1

RoHS

Lead free / RoHS Compliant

Gate Charge (Qg) @ Vgs

53nC @ 10V

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Input Capacitance (Ciss) @ Vds

3760pF @ 25V

Package

Bulk

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

NXP USA Inc.

Power Dissipation (Max)

203W (Tc)

Product Status

活跃

包装

Cut Tape (CT)

操作温度

-55°C ~ 175°C (TJ)

技术

MOSFET (Metal Oxide)

功率 - 最大

203W

家人

FETs - Single

场效应管类型

MOSFET N-Channel, Metal Oxide

Rds On(Max)@Id,Vgs

7.1 mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

3760 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

53 nC @ 10 V

漏源电压 (Vdss)

55V

Vgs（最大值）

±20V

场效应管特性

Standard