NXP USA Inc. PHD110NQ03LT,118

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25℃

75A Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Power Dissipation (Max)

115W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 1mA

操作温度

-55°C~175°C TJ

包装

Tape & Reel (TR)

系列

TrenchMOS™

零件状态

Obsolete

湿度敏感性等级(MSL)

1 (Unlimited)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.6m Ω @ 25A, 10V

输入电容(Ciss)(Max)@Vds

2200pF @ 25V

门极电荷(Qg)(最大)@Vgs

26.7nC @ 5V

漏源电压 (Vdss)

25V

Vgs（最大值）

±20V

RoHS状态

ROHS3 Compliant