NXP USA Inc. PSMN165-200K518

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SO

厂商

NXP USA Inc.

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Power Dissipation (Max)

3.5W (Tc)

操作温度

-55°C ~ 150°C (TJ)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

165mOhm @ 2.5A, 10V

输入电容(Ciss)(Max)@Vds

1330 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

40 nC @ 10 V

漏源电压 (Vdss)

200 V

Vgs（最大值）

±20V

场效应管特性

-