onsemi 2N7002DW-G

安装类型

表面贴装

包装/外壳

6-TSSOP, SC-88, SOT-363

供应商器件包装

SC-88/SC70-6/SOT-363

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

115mA (Ta)

Base Product Number

2N7002

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

5.85 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

200 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000265 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

80 mS

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

7.5 Ohms

RoHS

Details

Typical Turn-Off Delay Time

12.5 ns

Id - Continuous Drain Current

115 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

200mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

2Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 250μA

输入电容(Ciss)(Max)@Vds

50pF @ 25V

门极电荷(Qg)(最大)@Vgs

-

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

2 N-Channel

场效应管特性

Standard

产品类别

MOSFET