FDBL9403-F085T6详情
onsemi FDBL9403-F085T6重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-LL8-8
安装类型
表面贴装
供应商器件包装
8-HPSOF
MSL
MSL 1 - Unlimited
Qualification
AEC-Q101
Continuous Drain Current Id
300A
Vds - Drain-Source Breakdown Voltage
40 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
159.6 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi
Qg - Gate Charge
108 nC
Rds On - Drain-Source Resistance
950 mohms
RoHS
Details
Id - Continuous Drain Current
300 A
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number
FDBL9403
Current - Continuous Drain (Id) @ 25℃
50A (Ta), 300A (Tc)
厂商
onsemi
Power Dissipation (Max)
4.3W (Ta), 159.6W (Tc)
Product Status
活跃
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101
子类别
MOSFETs
技术
Si
通道数量
1 Channel
功率耗散
159.6W
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
0.95mOhm @ 50A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250µA
输入电容(Ciss)(Max)@Vds
6985 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
108 nC @ 10 V
漏源电压 (Vdss)
40 V
Vgs(最大值)
+20V, -16V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET
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