onsemi NTH4L045N065SC1

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

Continuous Drain Current Id

55

Number of Elements per Chip

1

Package Type

TO-247-4

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

187 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

105 nC

Rds On - Drain-Source Resistance

50 mOhms

RoHS

Details

Id - Continuous Drain Current

55 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

厂商

onsemi

Power Dissipation (Max)

187W (Tc)

Product Status

活跃

系列

SiC Power

包装

Tube

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

4

通道数量

1 Channel

功率耗散

187

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

50mOhm @ 25A, 18V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 8mA

输入电容(Ciss)(Max)@Vds

1870 pF @ 325 V

门极电荷(Qg)(最大)@Vgs

105 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -8V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET