onsemi NTMC083NP10M5L

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOIC

厂商

onsemi

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)

Number of Elements per Chip

2

Package Type

SOIC

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3 V, 4 V

Pd - Power Dissipation

3.1 W

Transistor Polarity

N-Channel, P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

3 nC, 8.4 nC

Rds On - Drain-Source Resistance

83 mOhms, 131 mOhms

Id - Continuous Drain Current

4.5 A, 3.6 A

Qualification

-

Continuous Drain Current Id

4.1A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

2 Channel

功率 - 最大

1.6W (Ta), 3.1W (Tc)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V

输入电容(Ciss)(Max)@Vds

222pF @ 50V, 525pF @ 50V

门极电荷(Qg)(最大)@Vgs

5nC @ 10V, 8.4nC @ 10V

漏源电压 (Vdss)

100V

产品类别

MOSFET

信道型

P

场效应管特性

Standard

产品类别

MOSFET