onsemi NTMFS005N10MCLT1G

安装类型

表面贴装

包装/外壳

8-PowerTDFN, 5 Leads

供应商器件包装

5-DFN (5x6) (8-SOFL)

Continuous Drain Current Id

105

Number of Elements per Chip

1

Package Type

DFN

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

16A (Ta), 105A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

3W (Ta), 125W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

5.1 mOhms

Id - Continuous Drain Current

105 A

系列

NTMFS005N

操作温度

-55°C ~ 175°C (TJ)

技术

MOSFET (Metal Oxide)

引脚数量

5

通道数量

1 Channel

功率耗散

125

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.1mOhm @ 34A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 192µA

输入电容(Ciss)(Max)@Vds

4100 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-