onsemi NTMFS0D6N03CT1G

安装类型

表面贴装

包装/外壳

SO-8FL

供应商器件包装

5-DFN (5x6) (8-SOFL)

Number of Elements per Chip

1

Package Type

DFN

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

200 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

65 nC

Rds On - Drain-Source Resistance

620 uOhms

RoHS

N

Id - Continuous Drain Current

433 A

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

433A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

60A (Ta), 433A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

3.9W (Ta), 200W (Tc)

Product Status

活跃

系列

NTMFS0D6N

包装

切割胶带

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

5

通道数量

1 Channel

功率耗散

200W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.62mOhm @ 30A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 280µA

输入电容(Ciss)(Max)@Vds

10500 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

145 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET