onsemi NTMFSC010N08M7

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

8-DFN (5x6.15)

Number of Elements per Chip

1

Package Type

DFN

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

61A

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

78.1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

29.3 nC

Rds On - Drain-Source Resistance

10 mOhms

Id - Continuous Drain Current

61 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

12.5A (Ta), 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

3.3W (Ta), 78.1W (Tc)

Product Status

活跃

操作温度

-55°C ~ 150°C (TJ)

系列

Dual Cool™

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率耗散

78.1W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 120µA

输入电容(Ciss)(Max)@Vds

2700 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

38 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET