onsemi NTMTSC1D6N10MCTXG

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-TDFNW (8.3x8.4)

Number of Elements per Chip

1

Package Type

TDFNW8

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

267A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

291 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

106 nC

Rds On - Drain-Source Resistance

1.7 mOhms

RoHS

Details

Id - Continuous Drain Current

267 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

NTMTSC1

Current - Continuous Drain (Id) @ 25℃

35A (Ta), 267A (Tc)

厂商

onsemi

Power Dissipation (Max)

5.1W (Ta), 291W (Tc)

Product Status

活跃

系列

NTMTS

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率耗散

291W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.7mOhm @ 90A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 650µA

输入电容(Ciss)(Max)@Vds

7630 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

106 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET