onsemi NTP165N65S3H

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

Number of Elements per Chip

1

Package Type

TO-220

Channel Mode

Enhancement

Qualification

-

Continuous Drain Current Id

19A

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

142 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

35 nC

Rds On - Drain-Source Resistance

165 mOhms

RoHS

Details

Id - Continuous Drain Current

19 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

142W (Tc)

Product Status

活跃

系列

NTP165N65S

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

3

通道数量

1 Channel

功率耗散

142W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

165mOhm @ 9.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1.6mA

输入电容(Ciss)(Max)@Vds

1808 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

35 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET