onsemi NVBLS1D7N08H

包装/外壳

TO-LL8-8

安装类型

表面贴装

供应商器件包装

8-HPSOF

Continuous Drain Current Id

241.3

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

237.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

121 nC

Rds On - Drain-Source Resistance

1.7 mOhms

RoHS

Details

Id - Continuous Drain Current

241.3 A

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Number of Elements per Chip

1

Package Type

H-PSOF8L

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

33A (Ta), 241.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

4.4W (Ta), 237.5W (Tc)

Product Status

活跃

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

1 Channel

功率耗散

237.5

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.7mOhm @ 80A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 479µA

输入电容(Ciss)(Max)@Vds

7675 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

121 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET