onsemi NXH010P120MNF1PTG

安装类型

底座安装

包装/外壳

Module

供应商器件包装

-

厂商

onsemi

Package

Tray

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

114A (Tc)

Package Type

F1-2PACK

Continuous Drain Current Id

114A

Vr - Reverse Voltage

1200 V

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 25 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

28

Mounting Styles

压装

Manufacturer

onsemi

Brand

onsemi

系列

-

操作温度

-40°C ~ 150°C (TJ)

包装

Tray

类型

Half Bridge Module

子类别

Discrete Semiconductor Modules

技术

SiC

功率耗散

250W

功率 - 最大

250W (Tj)

场效应管类型

2 N-Channel (Dual) Common Source

Rds On(Max)@Id,Vgs

14mOhm @ 100A, 20V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 40mA

输入电容(Ciss)(Max)@Vds

4707pF @ 800V

门极电荷(Qg)(最大)@Vgs

454nC @ 20V

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

信道型

Dual N Channel

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules