ON Semiconductor IRFR420BTF

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

2.3

Maximum Drain Source Resistance (mOhm)

2600@10V

Typical Gate Charge @ Vgs (nC)

14@10V

Typical Gate Charge @ 10V (nC)

14

Typical Input Capacitance @ Vds (pF)

470@25V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

35

Typical Rise Time (ns)

30

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.3

Package Width

6.1

Package Length

6.6

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

包装

卷带

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N