ON Semiconductor MCH6325-TL-E

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

2

Maximum Gate Source Leakage Current (nA)

10000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

255@10V

Typical Gate Charge @ Vgs (nC)

12@10V

Typical Gate Charge @ 10V (nC)

12

Typical Input Capacitance @ Vds (pF)

560@20V

Maximum Power Dissipation (mW)

1500

Typical Fall Time (ns)

29

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

68

Typical Turn-On Delay Time (ns)

10.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

Obsolete

配置

Single

信道型

P