ON Semiconductor MTB3N100E

表面安装

YES

材料

Si

终端数量

2

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

3

Maximum Drain Source Resistance (MOhm)

4000@10V

Typical Gate Charge @ Vgs (nC)

32.5@10V

Typical Gate Charge @ 10V (nC)

32.5

Typical Input Capacitance @ Vds (pF)

1316@25V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

33

Typical Rise Time (ns)

19

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

9.65(Max)

Package Width

4.83(Max)

Package Length

10.29(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-263

Supplier Package

D2PAK

Lead Shape

Gull-wing

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

150 °C

Rohs Code

无

Manufacturer Part Number

MTB3N100E

Package Shape

RECTANGULAR

Manufacturer

摩托罗拉半导体产品

Number of Elements

1

Part Life Cycle Code

Transferred

Ihs Manufacturer

MOTOROLA INC

Risk Rank

5.81

Drain Current-Max (ID)

3 A

包装

Rail

JESD-609代码

e0

零件状态

Obsolete

端子表面处理

Tin/Lead (Sn/Pb)

HTS代码

8541.29.00.95

子类别

FET 通用电源

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSSO-G2

资历状况

不合格

配置

Single

操作模式

增强型MOSFET

箱体转运

DRAIN

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

3 A

漏极-源极导通最大电阻

4 Ω

DS 击穿电压-最小值

1000 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

125 W