ON Semiconductor MTP3055E

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

12

Maximum Drain Source Resistance (MOhm)

150@10V

Typical Gate Charge @ Vgs (nC)

12@10V

Typical Gate Charge @ 10V (nC)

12

Typical Input Capacitance @ Vds (pF)

500(Max)@25V

Maximum Power Dissipation (mW)

40000

Typical Fall Time (ns)

65(Max)

Typical Rise Time (ns)

60(Max)

Typical Turn-Off Delay Time (ns)

65(Max)

Typical Turn-On Delay Time (ns)

20(Max)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Mounting

通孔

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N