ON Semiconductor MTP4N50E

材料

Si

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

4

Maximum Drain Source Resistance (MOhm)

1500@10V

Typical Gate Charge @ Vgs (nC)

27@10V

Typical Gate Charge @ 10V (nC)

27

Typical Input Capacitance @ Vds (pF)

775@25V

Maximum Power Dissipation (mW)

75000

Typical Fall Time (ns)

36

Typical Rise Time (ns)

34

Typical Turn-Off Delay Time (ns)

60

Typical Turn-On Delay Time (ns)

24

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.27(Max)

Package Width

4.57(Max)

Package Length

10.54(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

包装

Rail

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N