ON Semiconductor MTP4N80E

表面安装

NO

材料

Si

终端数量

3

晶体管元件材料

SILICON

EU RoHS

不合规

ECCN (US)

EAR99

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

800

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

4

Maximum Drain Source Resistance (MOhm)

3000@10V

Typical Gate Charge @ Vgs (nC)

36@10V

Typical Gate Charge @ 10V (nC)

36

Typical Input Capacitance @ Vds (pF)

1320@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

36

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.27(Max)

Package Width

4.57(Max)

Package Length

10.54(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Rohs Code

有

Manufacturer Part Number

MTP4N80E

Package Shape

RECTANGULAR

Manufacturer

Semiconductor Technology Inc

Number of Elements

1

Part Life Cycle Code

接触制造商

Ihs Manufacturer

SEMICONDUCTOR TECHNOLOGY INC

Risk Rank

5.75

Drain Current-Max (ID)

4 A

零件状态

Obsolete

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSFM-T3

配置

Single

操作模式

增强型MOSFET

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

3 Ω

脉冲漏极电流-最大值(IDM)

12 A

DS 击穿电压-最小值

800 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR