ON Semiconductor MTW8N60E

EU RoHS

不合规

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

8

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

550@10V

Typical Gate Charge @ Vgs (nC)

67@10V

Typical Gate Charge @ 10V (nC)

67

Typical Input Capacitance @ Vds (pF)

2480@25V

Maximum Power Dissipation (mW)

180000

Typical Fall Time (ns)

48

Typical Rise Time (ns)

37.6

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

23.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

20.9

Package Width

5.21

Package Length

15.95

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247

Lead Shape

通孔

包装

Rail

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N