ON Semiconductor NXH020U90MNF2PTG

安装类型

底座安装

包装/外壳

Module

供应商器件包装

-

Package

Tray

Base Product Number

NXH020

Current - Continuous Drain (Id) @ 25℃

149A (Tc)

厂商

onsemi

Product Status

活跃

Vr - Reverse Voltage

1200 V

Vds - Drain-Source Breakdown Voltage

900 V

Typical Turn-On Delay Time

43.2 ns

Vgs th - Gate-Source Threshold Voltage

4.3 V

Pd - Power Dissipation

352 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 18 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

20

Mounting Styles

压装

Manufacturer

onsemi

Brand

onsemi

Rds On - Drain-Source Resistance

14 mOhms

RoHS

Details

Typical Turn-Off Delay Time

110 ns

Id - Continuous Drain Current

149 A

操作温度

-40°C ~ 175°C (TJ)

系列

-

包装

Tray

类型

SiC MOSFET Module

子类别

Discrete Semiconductor Modules

技术

Silicon Carbide (SiC)

配置

2 N-Channel (Dual)

功率 - 最大

352W (Tj)

Rds On(Max)@Id,Vgs

14mOhm @ 100A, 15V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 40mA

输入电容(Ciss)(Max)@Vds

7007pF @ 450V

门极电荷(Qg)(最大)@Vgs

546.4nC @ 15V

上升时间

19.8 ns

漏源电压 (Vdss)

900V

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

功率MOSFET模块

Vf-正向电压

2.3 V

产品类别

Discrete Semiconductor Modules