ON Semiconductor RFP2N20L

材料

Si

EU RoHS

不合规

ECCN (US)

EAR99

Automotive

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±10

Maximum Continuous Drain Current (A)

2

Maximum Drain Source Resistance (MOhm)

3500@5V

Typical Input Capacitance @ Vds (pF)

200(Max)@25V

Maximum Power Dissipation (mW)

25000

Typical Fall Time (ns)

20

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

25

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.02(Max)

Package Width

4.57(Max)

Package Length

10.28(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220AB

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N