ON Semiconductor SI3445DV
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SI3445DV
1807-SI3445DV
晶体管 - FET,MOSFET - 阵列
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SI3445DV datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at utmel
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SI3445DV详情
ON Semiconductor SI3445DV重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
20
Maximum Gate Source Voltage (V)
±8
Maximum Continuous Drain Current (A)
5.5
Maximum Drain Source Resistance (mOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
1926@10V
Maximum Power Dissipation (mW)
1600
Typical Fall Time (ns)
45
Typical Rise Time (ns)
11
Typical Turn-Off Delay Time (ns)
90
Typical Turn-On Delay Time (ns)
13
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1(Max)
Package Width
1.7(Max)
Package Length
3(Max)
PCB changed
6
Supplier Package
SuperSOT
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
引脚数量
6
配置
单四排液
信道型
P
SI3445DV拓展信息








哦! 它是空的。