ON Semiconductor SI4466DY
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SI4466DY
1807-SI4466DY
晶体管 - FET,MOSFET - 阵列
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SI4466DY datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at utmel
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SI4466DY详情
ON Semiconductor SI4466DY重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
20
Maximum Gate Source Voltage (V)
±12
Maximum Continuous Drain Current (A)
15
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
47@5V
Typical Input Capacitance @ Vds (pF)
4700@10V
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
35
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
95
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
1.65(Max)
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SOP
Supplier Package
SOIC N
Lead Shape
Gull-wing
包装
卷带
零件状态
Obsolete
引脚数量
8
配置
单四漏三源
信道型
N
SI4466DY拓展信息








哦! 它是空的。