ON Semiconductor SI4539DY

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

20

Maximum Continuous Drain Current (A)

7@N Channel|5@P Channel

Maximum Drain Source Resistance (mOhm)

28@10V@N Channel|52@10V@P Channel

Typical Gate Charge @ Vgs (nC)

18@10V@N Channel|19@10V@P Channel

Typical Gate Charge @ 10V (nC)

18@N Channel|19@P Channel

Typical Input Capacitance @ Vds (pF)

650@15V@N Channel|730@15V@P Channel

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

9@N Channel|55@P Channel

Typical Rise Time (ns)

14@N Channel|10@P Channel

Typical Turn-Off Delay Time (ns)

23@N Channel|90@P Channel

Typical Turn-On Delay Time (ns)

8@N Channel|11@P Channel

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.65(Max)

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

N|P