ON Semiconductor SI4884DY

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

11.5

Maximum Drain Source Resistance (MOhm)

10@10V

Typical Gate Charge @ Vgs (nC)

19@5V

Typical Input Capacitance @ Vds (pF)

2070@15V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

13

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

13

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.65(Max)

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

零件状态

Obsolete

引脚数量

8

配置

单四漏三源

信道型

N