ON Semiconductor SI4963DY

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±12

Maximum Continuous Drain Current (A)

6.2

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1456@10V

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

37

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

57

Typical Turn-On Delay Time (ns)

15

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

1.65(Max)

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC N

Lead Shape

Gull-wing

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

双排双泄

信道型

P